Advances In Semiconductor Nanostructures: Growth, Characterization, Properties And Applications by Alexander V. LatyshevAdvances In Semiconductor Nanostructures: Growth, Characterization, Properties And Applications by Alexander V. Latyshev

Advances In Semiconductor Nanostructures: Growth, Characterization, Properties And Applications

byAlexander V. LatyshevEditorAnatoliy V. Dvurechenskii, Alexander L. Aseev

Paperback | November 30, 2016

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Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applicationsfocuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III V, IV, and II VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena.

The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research.

  • Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures
  • Covers recent developments in the field from all over the world
  • Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries
Professor Alexander V. Latyshev is Director of Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, Russia. He is a specialist in the field of semiconductor physics, crystal growth, nanoheterostructures, electron&ion beam lithography, crystallography, structural diagnostics, and electron...
Title:Advances In Semiconductor Nanostructures: Growth, Characterization, Properties And ApplicationsFormat:PaperbackDimensions:552 pages, 8.75 × 6.35 × 0.68 inPublished:November 30, 2016Publisher:Elsevier ScienceLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:0128105127

ISBN - 13:9780128105122

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Table of Contents

Chapter I. Low-Dimensional Systems: Theory and Experiment 1.1. Theory of the two-dimensional electronic systemsA.V. Chaplik, M.V. Entin1.2. Two-dimensional semimetal in HgTe-based quantum wellsZ.D.Kvon, E.B.Olshanetsky, D.A.Kozlov, N.N.Mikhailov, S.A.Dvoretsky1.3. Nonlinear two-dimensional electron conductivity at high filling factorsA.A.Bykov, S.A. Vitkalov1.4. Silicon-based nanoheterostructures with quantum dotsA.V.Dvurechenskii, A.I.Yakimov1.5. Electron transport: from nanostructures to nanoelectromechanical systemsA.G.Pogosov, M.V. Budantsev, A.A. Shevyrin, E.Yu.Zhdanov, D.A.Pohabov1.6. Modeling of quantum transport and single-electron charging in GaAs/AlGaAs-nanostructuresO.A.Tkachenko, V.A.Tkachenko, Z.D.Kvon, D.V.Scheglov, A.L.Aseev1.7. Spectroscopy of vibrational states in low-dimensional semiconductor systemsA.G.Milekhin, D.R.T. Zahn

Chapter II. Surface, Interface, Epitaxy 2.1. Atomic processes on silicon surfaceA.V. Latyshev, L.I. Fedina, S.S. Kosolobov, S.V. Sitnikov, D.I. Rogilo, E.E. Rodyakina, D.A. Nasimov, D.V. Sheglov, A.L. Aseev2.2. Atomic structure of low-dimensional semiconductor heterosystemsA.K.Gutakovsky, A.V.Latyshev, A.L.Aseev2.3. Formation of GaAs step-terraced surfaces by annealing in equilibrium conditionsV.L.Alperovich, I.O.Ahundov, D.M.Kazantsev, N.S.Rudaya, E.E.Rodiakina, A.S.Kozhukhov, D.V.Shcheglov, A.N.Karpov, N.L.Schwartz, A.S.Terekhov, A.V. Latyshev2.4. Atomic Processes in the Formation Strained Ge Layers on Si (111) and (001) Substrates within Stransky-Krastanov Growth MechanismS.A. Teys2.5. Molecular-beam epitaxy of CdxHg1-xTeYu.G.Sidorov, A.P.Antsiferov, V.S.Varavin, S.A.Dvoretsky, N.N.Mikhailov, M.V.Yakushev, I.V.Sabinina, V.G.Remesnik, D.G.Ikusov, I.N.Uzhakov, G.Yu.Sidorov, V.D.Kuzmin, S.V.Rihlicky, V.A.Shvets, A.S.Mardezhov, E.V.Spesivtsev, A.K.Gutakovsky, A.V.Latyshev2.6. Surface morphologies obtained by Ge deposition on bare and oxidized silicon surfaces at different temperaturesA.A.Shklyaev, K.N.Romaniuk, S.S.Kosolobov, A.V.Latyshev2.7. Monte-Carlo simulation of semiconductor nanostructures growthI.G.Neizvestny, N.L.Shwartz

Chapter III. Radiation Effects on Semiconductor Structures 3.1. The Energy Pulse Oriented Crystallization Phenomenon in Solids (Laser Annealing)A.V.Dvurechenskii3.2. Universality of the {113} habit plane in Si for mixed aggregation of vacancies and self-interstitial atoms provided by topological bond defect formationL.I.Fedina, A.K.Gutakovsky, A.V.Latyshev, A.L.Aseev3.4. Silicon-on-insulator structures produced by ion-beam synthesis and hydrogen transferI.E.Tyschenko, V.P.Popov

Chapter IV. Electronic Advanced Materials 4.1. Superminiature radiation sources based on semiconductor nanostructuresV.A.Haisler, A.V.Haisler, I.A.Derebezov, A.S.Yaroshevich, A.K.Bakarov, D.V.Dmitriev, A.K.Kalagin, A.I.Toropov, M.M.Kachanova, Yu.A.Zhivodkov, T.A.Gavrilova, A.S.Medvedev, L.A.Nenasheva, O.I.Semenova, K.V.Grachev, V.K.Sandyrev, A.S.Kozhukhov, D.V.Shcheglov, D.B.Tretyakov, I.I.Beterov, V.M.Entin, I.I.Ryabtsev, A.V.Latyshev, A.L.Aseev4.2. Three-dimensional systems and nanostructures: technology, physics and applicationsV.Ya.Prinz4.3. The nature of defects responsible for transport in a hafnia-based resistive random access memory elementD.R.Islamov, T.V.Perevalov, V.A.Gritsenko, V.Sh.Aliev, A.A.Saraev, V.V. Kaichev, M.V.Ivanova, M.V.Zamo1ryanskaya, A. Chin4.4. The optical multiplexor based on a multiple of connected waveguides in silicon-on-insulator structuresA.V.Tsarev