Circuit and Interconnect Design for RF and High Bit-rate Applications by Hugo VeenstraCircuit and Interconnect Design for RF and High Bit-rate Applications by Hugo Veenstra

Circuit and Interconnect Design for RF and High Bit-rate Applications

byHugo Veenstra, John R. Long

Paperback | November 25, 2010

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Realizing maximum performance from high bit-rate and RF circuits requires close attention to IC technology, circuit-to-circuit interconnections (i.e., the 'interconnect') and circuit design. This detailed book covers each of these topics from theory to practice, with sufficient detail to help you produce circuits that are 'first-time right'. Many practical circuit examples are included to demonstrate the interplay between technology, interconnect and circuit design.
John Long is Professor at the TU Delft and he is an expert in the RF / Ultrawideband field
Title:Circuit and Interconnect Design for RF and High Bit-rate ApplicationsFormat:PaperbackDimensions:260 pages, 9.25 × 6.1 × 0.03 inPublished:November 25, 2010Publisher:Springer NetherlandsLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:9048177502

ISBN - 13:9789048177509

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Table of Contents

Preface.1. The Challenge. 1.1 Interconnect. 1.2 Device Metrics. 1.3 Cross-Connect Switches. 1.4 Transistor Operation above BVCEO. 1.5 CML circuits, PRBS generator. 1.6 Oscillators. 1.7 Outline of the book. References.2. Interconnect Modelling, Analysis and Design. 2.1 Introduction. 2.2 Transmission Line Theory. 2.3 When to Include Transmission Line Effects. 2.4 Secondary Effects. 2.5 Resistivity-Frequency Mode Chart for a Microstrip Line. 2.6 Preferred Transmission Line Configurations. 2.7 Applying the Skin Effect Formulas to a SiGeBiCMOS Process. 2.8 Models including Skin Effect. 2.9 Signal Transfer Across a Transmission Line. 2.10 Interconnect Test Structures. 2.11 Modelling and Considerations of Digital Interconnect. 2.12 Circuit and Interconnect Design Flow. 2.13 Conclusions and Outlook. References.3. Device Metrics. 3.1 Introduction. 3.2 Miller Effects. 3.3 Definitions based on y-Parameters. 3.4 Approximate Formulas for the Device Metrics. 3.5 Optimising a Technology for FA. 3.6 Relationship Between FA, FT and FMAX. 3.7 Trends in Device Metrics. 3.8 Other Trends. 3.9 Bipolar versus RF-CMOS. 3.10 Conclusions and Outlook. References.4. Cross-Connect Switch Design. 4.1 Introduction. 4.2 Switch Matrix Design. 4.3 Buffer Circuits. 4.4 Complete RF Signal Path. 4.5 Supply Decoupling. 4.6 Experimental Results. 4.7 Conclusions and Outlook.5. Bias Circuits Tolerating Output Voltages above BVCEO. 5.1 Introduction. 5.2 Principle of Collector-Base Avalanche Current. 5.3 Analysis of Simple 2-Transistor Current Mirrors. 5.4 Analysis of Current Mirrors with Internal Buffer. 5.5 Avalanche Current Compensation. 5.6 Conclusions and Outlook.6. Design of Synchronous High Speed CML Circuits. 6.1 Introduction. 6.2 PRBS Background. 6.3 InP Technology. 6.4 PRBS Generator Design. 6.5 Experimental Results. 6.6 Distributed Capacitive Loading Reviewed. 6.7 Conclusions and Outlook. References.7. Analysis and Design of High Frequency LC-VCOs. 7.1 Introduction. 7.2 Input Impedance of a Cross-Coupled Differential Pair. 7.3 Input Impedance of a Capacitively-Loaded Emitter Follower. 7.4 Combining Negative Resistance and Output Buffer Functions. 7.5 LC-VCO Operating at a Frequency Close to FCROSS. 7.6 LC-VCO Operating at a Frequency Above FCROSS. 7.7 I/Q Signal Generation. 7.8 Conclusions and Outlook. References.Glossary. Appendix A. Index.