Effect Of Disorder And Defects In Ion-implanted Semiconductors: Electrical And Physiochemical…

Other | May 1, 1997

byWillardson, R. K., R. K. Willardson

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Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing.
Electrical and Physicochemical Characterizationfocuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.

Key Features
* Provides basic knowledge of ion implantation-induced defects
* Focuses on physical mechanisms of defect annealing
* Utilizes electrical and physico-chemical characterization tools for processed semiconductors
* Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

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From the Publisher

Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publica...

Format:OtherDimensions:300 pages, 1 × 1 × 1 inPublished:May 1, 1997Publisher:Academic PressLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:0080864422

ISBN - 13:9780080864426

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Table of Contents

Introduction.H. Ryssel,Ion Implantation into Semiconductors: Historical Perspectives.Implantation and Annealing Processes:Y.-N. Wang and T.-C. Ma,Energetic Stopping Power for Energetic Ions in Solid.S.T. Nakagawa,Solid Effect on the Electronic Stopping and Application to Range Estimation.G. Nuler, S. Kalbitzer, and G.N. Greaves,Ion Implantation into Amorphous Semiconductors.Electrical Characterization:J. Boussey-Said,Sheet and Spreading Resistance Analysis of Ion Implanted and Annealed Semiconductors.M.L. Polignano and G. Queirolo,Stripping Hall Affect Studies.Physico-Chemical Studies:J. Stoemenos,Transmission Electron Microscopy Analysis.M. Servidori and R. Nipoti,Rutherford Back Scattering Studies of Ion Implanted Semiconductors.P. Zaumseil,X-Ray Diffraction Techniques. Subject Index.