Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization by Gerard Willardson

Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal…

byGerard WillardsonEditorEicke R. Weber, Constantinos Christofides

Hardcover | May 22, 1997

not yet rated|write a review

Pricing and Purchase Info

$329.72 online 
$410.06 list price save 19%
Earn 1649 plum® points

In stock online

Ships free on orders over $25

Not available in stores

about

Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.

  • Provides basic knowledge of ion implantation-induced defects
  • Focuses on physical mechanisms of defect annealing
  • Utilizes electrical, physical, and optical characterization tools for processed semiconductors
  • Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

About The Author

Prof. Dr. Eicke R. Weber, Fraunhofer-Institut fSolare Energiesysteme ISE, Freiburg, Germany

Details & Specs

Title:Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal…Format:HardcoverDimensions:316 pages, 9 × 6 × 0.98 inPublished:May 22, 1997Publisher:Academic Press

The following ISBNs are associated with this title:

ISBN - 10:0127521461

ISBN - 13:9780127521466

Look for similar items by category:

Customer Reviews of Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Reviews

Extra Content

Table of Contents

Optical Characterization M Fried, T. Lohner, and J. Gyulai, Ellipsometric AnalysisA. Seas and C. Christofides, Transmission and Reflection Spectoscopy on Ion Implanted SemiconductorsA. Othonos, Photoluminescence and Raman Scattering of Ion Implanted Semiconductors: Influence of Annealing

Thermal Wave Analyses C. Cristofides, Photomodulated Thermoreflectance Investigation of Implanted Wafers: Annealing Kinetics of DefectsU. Zammit, Photothermal Delection Spectroscopy Characterization of Ion-Implanted and Annealed Si FilmsA. Mandelis, A. Budiman, and M. Vargas, Photothermal Deep Level Transient Spectroscopy of Impurities and Defects in Semiconductors

Quantum Well Structures and Compound Systems R. Kalish and S. Charbonneau, Ion Implantation into Quantum Well StructuresA.M. Myasnikov and N.N. Gerasimenko, Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors