Finfet Modeling For Ic Simulation And Design: Using The Bsim-cmg Standard

Hardcover | February 18, 2015

byYogesh Singh Chauhan, Darsen Duane Lu, Vanugopalan Sriramkumar

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This book is the first to explain FinFET modeling for IC simulation and the industry standard BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: Why you should use FinFET The physics and operation of FinFET Details of the FinFET standard model BSIM-CMG Parameter extraction in BSIM-CMG FinFET circuit design and simulation Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts insight into the specifications of the standard The first book on the industry-standard FinFET model - BSIM-CMG

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From the Publisher

This book is the first to explain FinFET modeling for IC simulation and the industry standard BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects ...

From the Jacket

This book is the first to explain FinFET modeling for IC simulation and the industry standard BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard.The book gives a strong foundation on the physics and operation of FinFET, details aspects o...

Yogesh S. Chauhan is an assistant professor in EE department at Indian Institute of Technology Kanpur, India. He received Ph.D. degree in compact modeling of high voltage MOSFETs in 2007 from EPFL Switzerland. During 2007-2010, he was manager in IBM Bangalore where he led compact modeling team focusing on RF bulk and SOI transistors an...
Format:HardcoverDimensions:304 pages, 9.41 × 7.24 × 0.98 inPublished:February 18, 2015Publisher:Academic PressLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:0124200311

ISBN - 13:9780124200319

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Table of Contents

1. FinFET- from Device Concept to Standard Compact Model 2. Analog/RF behavior of FinFET 3. Core Model for FinFETs 4. Channel Current and Real Device Effects 5. Leakage Current Models 6. Charge, Capacitance and Nonquasi-Static Effect 7. Parasitic Resistances and Capacitances 8. Noise 9. Junction Diode Current and Capacitance 10. Benchmark Tests for Compact Models 11. BSIM-CMG Model Parameter Extraction 12. Temperature Effects