Fundamentals of Power Semiconductor Devices by B. Jayant BaligaFundamentals of Power Semiconductor Devices by B. Jayant Baliga

Fundamentals of Power Semiconductor Devices

byB. Jayant Baliga

Hardcover | September 5, 2008

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Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Title:Fundamentals of Power Semiconductor DevicesFormat:HardcoverDimensions:1096 pagesPublished:September 5, 2008Publisher:Springer USLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:0387473130

ISBN - 13:9780387473130

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Table of Contents

Introduction.- Material properties and transport physics.- Breakdown voltage.- Schottky rectifiers.- P-i-N rectifiers.- Power MOSFETs.- Bipolar junction transistors.- Thyristors.- Insulated gate bipolar transistors.- Synopsis.