Germanium Silicon: Physics and Materials by Robert WillardsonGermanium Silicon: Physics and Materials by Robert Willardson

Germanium Silicon: Physics and Materials

byRobert WillardsonEditorEicke R. Weber, John C. Bean

Hardcover | November 2, 1998

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Since its inception in 1966, the series of numbered volumes known asSemiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such asHydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes inSemiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Prof. Dr. Eicke R. Weber, Fraunhofer-Institut fSolare Energiesysteme ISE, Freiburg, Germany
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Title:Germanium Silicon: Physics and MaterialsFormat:HardcoverDimensions:444 pages, 9 × 6 × 0.98 inPublished:November 2, 1998Publisher:Academic Press

The following ISBNs are associated with this title:

ISBN - 10:012752164X

ISBN - 13:9780127521640

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Table of Contents

J.C. Bean,Growth Techniques and Procedures.R. Hull,Misfit Strain Accommodation in SiGe Heterostructures.M.J. Shaw and M. Jaros,Fundamental Physics of Strained Layer GeSi: Quo Vadis?F. Cerdeira,Optical Properties.S.A. Ringel and P.N. Grillot,Electronic Properties and Deep Levels in Germanium-Silicon.J.C. Campbell,Optical Applications.K. Eberl, K. Brunner, and O.G. Schmidt,Si1-yCy and Si1-x-yGexCy Alloy Layers. Subject Index.