Group III Nitride Semiconductor Compounds: Physics and Applications by Bernard GilGroup III Nitride Semiconductor Compounds: Physics and Applications by Bernard Gil

Group III Nitride Semiconductor Compounds: Physics and Applications

EditorBernard Gil

Hardcover | April 1, 1998

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This book was motivated in large part by the tremendous interest shown in nitride semiconductors by the scientific community in recent years. The interest is due to the wide range of commercially viable industrial applications such as visible and ultraviolet optoelectronics. The aim of thisbook is to elucidate the physics of nitride-based materials and related devices, and to provide to graduate students and young researchers a rapid introduction to this burgeoning field. Chapters of tutorial style are of medium length, and have been commissioned from some of the very best experts oneach topic, both from academia and from industry. All aspects arising from the dual challenges of achieving high-quality, single crystal material and engineering optoelectronic devices are addressed. In the first chapters, the reader will learn about the nitrides in the context of othersemiconductors, and will be exposed to the methods used to grow these materials. The chapters which follow discuss the materials' performance from the point of view of electronic transport, optical and structural properties. Finally, an extensive review of device applications is provided in thearea of modern transistors, ultraviolet detectors and light emitters.
Bernard Gil, Directeur de Recherche au CNRS, Centre National de la Recherche Scientifique, Groupe d'Etude des Semiconducteurs, Universite de Montpellier II, Case courrier 074, F-34095 Montpellier Cedex 5, France, Tel:+33 67 14 39 24, Fax:+33 67 14 37 60, email: (address details of contributors attached)
Title:Group III Nitride Semiconductor Compounds: Physics and ApplicationsFormat:HardcoverDimensions:486 pages, 9.21 × 6.14 × 1.22 inPublished:April 1, 1998Publisher:Oxford University Press

The following ISBNs are associated with this title:

ISBN - 10:0198501595

ISBN - 13:9780198501596

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Table of Contents

1. Beyond silicon: the rise of compound semiconductors2. Deposition and properties of III-nitrides by molecular beam epitaxy3. MOVPE growth of nitrides4. Structural defects and materials performance of the III-V nitrides5. Modulation spectroscopy of the group III nitrides6. Optical properties and lasing in GaN7. Defect spectroscopy in the nitrides8. Electronic and optical properties of GaN based quantum wells9. Transistors and detectors based on GaN related materials10. III-V nitride based short-wavelength LEDs and LDs11. Cubic group III nitrides