Hf-Based High-k Dielectrics: Process Development, Performance Characterization, and Reliability by Young-hee KimHf-Based High-k Dielectrics: Process Development, Performance Characterization, and Reliability by Young-hee Kim

Hf-Based High-k Dielectrics: Process Development, Performance Characterization, and Reliability

byYoung-hee Kim, Jack C LeeEditorSanjay Banerjee

Paperback | October 3, 2005

Pricing and Purchase Info

$42.44

Earn 212 plum® points

In stock online

Ships free on orders over $25

Not available in stores

about

Semiconductors continue to get smaller with a tremendous increase in the density of devices that necessarily conduct electrons. Because of this density of functions and devices engineers and scientists are searching for practical and effective new materials that are non-conductive (dielectric) in order to build much smaller and viable gates through which electrons move without effecting parallel and overlapping operations. Chip density and performance improvements have been driven by aggressive scaling of semiconductor devices. In both logic and memory applications, SiO2 gate dielectrics have reached its minimum thickness due to direct tunneling current and reliability concerns. Therefore high-k dielectrics have attracted a great deal of attention from industries as the replacement of conventional SiO2 gate dielectrics. So far, many of the candidate materials have been evaluated and Hf-based high-k dielectrics appears to be one of the promising materials for gate dielectrics.
Title:Hf-Based High-k Dielectrics: Process Development, Performance Characterization, and ReliabilityFormat:PaperbackDimensions:92 pages, 9.25 × 7.5 × 0.68 inPublished:October 3, 2005Publisher:MORGAN & CLAYPOOL PUBLISHERSLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:1598290045

ISBN - 13:9781598290042

Look for similar items by category:

Customer Reviews of Hf-Based High-k Dielectrics: Process Development, Performance Characterization, and Reliability

Reviews

Table of Contents

1 Introduction, Front-End Device Technology Evolutions, Beyond 45nm Technology, Issues in High-k Dielectrics, Outline, 2 Hard and Soft Breakdown Characteristics of Ultra-thin HfO2 under Dynamic and Constant Voltage Stress, Motivation for High-k Dielectrics, Reliability issues of High-k Dielectrics, Breakdown Behaviors of HfO2 under DC stress, Dynamic Reliability of HfO2, 3 Impact of High Temperature Forming Gas and D2 Anneal on Reliability of HfO2 Gate Dielectrics, Previous Results, Effect of D2 Anneal on Various Surface Preparations, Effect of Forming Gas Temperature in terms of Reliability, 4 Effect of Barrier Height and Nature of Bi-Layer Structure of HfO2 with Dual Metal Gate Technology, Motivation, Experimental, Results and Discussion, Conclusion, 5 Bi-Modal Defect Generation Rate by Low Barrier Height and Its Impact on Reliability Characteristics, Motivation, Experimental