Identification of Defects in Semiconductors

Other | October 1, 1998

byWillardson, R. K., R. K. Willardson

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GENERAL DESCRIPTION OF THE SERIES
Since its inception in 1966, the series of numbered volumes known asSemiconductors and Semimetalshas distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such asHydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon,and others promise indeed that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes inSemiconductors and Semimetalshave been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

GENERAL DESCRIPTION OF THE VOLUME
This volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.

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From the Publisher

GENERAL DESCRIPTION OF THE SERIESSince its inception in 1966, the series of numbered volumes known asSemiconductors and Semimetalshas distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark...

Format:OtherDimensions:434 pages, 1 × 1 × 1 inPublished:October 1, 1998Publisher:Academic PressLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:008086449X

ISBN - 13:9780080864495

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Table of Contents

List of Contributors. Preface.G. Davies,Optical Measurements of Point Defects.P.M. Mooney,Defect Identification Using Capacitance Spectroscopy.M. Stavola,Vibrational Spectroscopy of Light Element Impurities in Semiconductors.P. Schwander, W.D. Rau, C. Kisielowski, M. Gribelyuk, and A. Ourmazd,Defect Processes in Semiconductors Studied at the Atomic Level by Transmission Electron Microscopy.N.D. Jager and E.R. Weber,Scanning Tunneling Microscopy of Defects in Semiconductors. Subject Index. Contents of Volumes in This Series.