III-Nitride Semiconductors and their Modern Devices by Bernard GilIII-Nitride Semiconductors and their Modern Devices by Bernard Gil

III-Nitride Semiconductors and their Modern Devices

EditorBernard Gil

Hardcover | September 22, 2013

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This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in theindustrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging fromadvanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and oftheir devices to a large audience of readers.
Bernard Gil was hired at CNRS in 1982 as an Associate Researcher, before being appointed Director of Research in 1995. He was granted the degree of Doctor Honoris Causa from the University of Saint Petersburg in July 2012. He is currently directing the Institute of Physics at Montpellier.
Title:III-Nitride Semiconductors and their Modern DevicesFormat:HardcoverDimensions:648 pagesPublished:September 22, 2013Publisher:Oxford University PressLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:0199681724

ISBN - 13:9780199681723


Table of Contents

1. Hiroshi Amano: Development of the nitride-based UV/DUV LEDs2. Izabella Grzegory, Michal Bockowski, Piotr Perlin, Czeslaw Skierbiszewski, Tadeusz Suski, Marcin Sarzynski, Stanislaw Krukowski, and Sylwester Porowski: The homoepitaxial challenge: GaN crystals grown at high pressure for laser diodes and laser diode arrays3. Armin Dadgar and Alois Krost: Epitaxial growth and benefits of GaN on silicon4. Ronny Kirste and Zlatko Sitar: The growth of bulk aluminum nitride5. Andre Strittmatter: Epitaxial growth of nitride quantum dots6. Raphael Butte, Gatien Cosendey, Lorenzo Lugani, Marlene Glauser, Antonino Castiglia, Guillaume Perillat-Merceroz, Jean-Francois Carlin, and Nicolas Grandjean: Properties of InAlN layers nearly lattice-matched to GaN and their use for photonics and electronics7. Hideto Miyake: Growth and optical properties of aluminum rich AlGaN heterostructures8. Michael Kneissl and Tim Wernicke: Optical and structural properties of InGaN light emitters on non- and semipolar GaN9. Rudeesun Songmuang and Eva Monroy: GaN-based single-nanowire devices10. Jean Yves Duboz: Advanced photonic and nanophotonic devices11. Yvon Cordier, Tatsuya Fujishima, Bin Lu, Elison Matioli, and Tomas Palacios: Nitride-based electron devices for high power / high frequency applications12. Maria Tchernycheva and Francois Julien: Intersubband transitions in low dimensional nitrides13. Tatiana V. Shubina, Mikhail M. Glazov, Nikolay A. Gippius, and Bernard Gil: The slow light in gallium nitride14. Csilla Gergely: Nitride devices and their biofunctionalization for biosensing applications15. Walter R. L. Lambrecht and Atchara Punya: Heterovalent ternary II-IV-N2 compounds: perspectives for a new class of wide-band-gap nitrides16. O. Kyriienko, I.A. Shelykh, and Alexey V. Kavokin: Terahertz emission in polaritonic systems with nitrides