Intense Terahertz Excitation Of Semiconductors

Hardcover | December 15, 2005

bySergey Ganichev, Willi Prettl

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iIntense Terahertz Excitation of Semiconductors/i presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures. Terahertz properties of semiconductors are in the center of scientific activities because of theneed of high-speed electronics. This research monograph brigdes the gap between microwave physics and photonics. It focuses on a core topic of semiconductor physics providing a full description of the state of the art of the field. _ The reader is introduced to new physical phenomenawhich occur in the terahertz frequency range at the transition from semi-classical physics with a classical field amplitude to the fully quantized limit with photons. The book covers a wide range of optical, optoelectronic, and nonlinear transport processes, presenting experimental results, clearlyvisualizing models and basic theories. Background information for future work and exhaustive references of current literature are given. A particularly valuable feature is through the discussion of various technical aspects of the terahertz range like the generation of high-power coherent radiation,optical components, instrumentation, and detection schemes of short intense radiation impulses. The book complements, for the first time in form of a monograph, previous books on infrared physics which dealt with low-power optical and opto-electronic processes. It will be useful not only toscientists but also to advanced students who are interested in terahertz research.

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From the Publisher

iIntense Terahertz Excitation of Semiconductors/i presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures. Terahertz properties of semiconductors are in the center of scientific activities because of theneed of high-speed electronics. This research m...

Sergey D. Ganichev Department of Physics Universitat Regensburg D93040 Regensburg German Willi Prettl Department of Physics Universitat Regensburg D93040 Regensburg Germany
Format:HardcoverDimensions:432 pages, 9.21 × 6.14 × 1.08 inPublished:December 15, 2005Publisher:Oxford University PressLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:0198528302

ISBN - 13:9780198528302

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Table of Contents

1. Experimental Technique2. Tunneling in Terahertz Fields3. Multi-Photon Excitation Beyond the Perturbative Limit4. Saturation of Absorption5. Electron Gas Heating6. Terahertz Nonlinear Optics7. Terahertz Radiation Induced Currents8. Bloch Oscillations

Editorial Reviews

`...important and topical...with a good range of topics...and an audience amoung semiconductor physicists, but also advanced students who are interested in terahertz electronics and high-power terahertz research.'Carl Pidgeon, Heriot Watt University, Edinburgh