Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

byPeter Pichler

Paperback | November 1, 2012

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by Peter Pichler
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Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.
Preface / Frequently Used Symbols / Explanation of Frequently Used Abbreviations Fundamental Concepts Silicon and Its Imperfections; The Electron System; Phenomenological and Atomistic Approaches to Diffusion; Thermodynamics; Reaction Kinetics; Exchange of Matter Between Phases; Bibliography Intrinsic Point Defects Concentration in Th...
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Title:Intrinsic Point Defects, Impurities, and Their Diffusion in SiliconFormat:PaperbackProduct dimensions:10 X 7.01 X 0 inShipping dimensions:10 X 7.01 X 0 inPublished:November 1, 2012Publisher:Springer ViennaLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:3709172047

ISBN - 13:9783709172049

Appropriate for ages: All ages

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