Lateral Alignment of Epitaxial Quantum Dots by Oliver G. SchmidtLateral Alignment of Epitaxial Quantum Dots by Oliver G. Schmidt

Lateral Alignment of Epitaxial Quantum Dots

byOliver G. Schmidt

Paperback | November 25, 2010

Pricing and Purchase Info

$373.00 online 
$386.50 list price
Earn 1,865 plum® points

Prices and offers may vary in store

Quantity:

In stock online

Ships free on orders over $25

Not available in stores

about

Accurate positioning of self-organized nanostructures on a substrate surface can be regarded as the Achilles' heel of nanotechnology. This perception also applies to self-assembled semiconductor quantum dots. This book describes the full range of possible strategies to laterally align self-assembled quantum dots on a substrate surface, starting from pure self-ordering mechanisms and culminating with forced alignment by lithographic positioning. The text addresses both short- and long-range ordering phenomena and paves the way for the future high integration of single quantum dot devices on a single chip. Contributions by the best-known experts in this field ensure that all relevant quantum-dot heterostructures are elucidated from diverse perspectives.

The author was awarded the Philip-Morris Research Award in 2002.
Loading
Title:Lateral Alignment of Epitaxial Quantum DotsFormat:PaperbackDimensions:707 pagesPublished:November 25, 2010Publisher:Springer-Verlag/Sci-Tech/TradeLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:3642079911

ISBN - 13:9783642079917

Reviews

Table of Contents

Lateral Self-Alignment.- Physical Mechanisms of Self-Organized Formation of Quantum Dots.- Routes Toward Lateral Self-Organization of Quantum Dots: the Model System SiGe on Si(001).- Short-Range Lateral Ordering of GeSi Quantum Dots Due to Elastic Interactions.- Hierarchical Self-Assembly of Lateral Quantum-Dot Molecules Around Nanoholes.- Energetics and Kinetics of Self-Organized Structure Formation in Solution Growth - the SiGe/Si System.- Ge Quantum Dot Self-Alignment on Vicinal Substrates.- Lateral Arrangement of Ge Self-Assembled Quantum Dots on a Partially Relaxed SixGe1?x Buffer Layer.- Ordering of Wires and Self-Assembled Dots on Vicinal Si and GaAs (110) Cleavage Planes.- Stacking and Ordering in Self-Organized Quantum Dot Multilayer Structures.- Self-Organized Anisotropic Strain Engineering for Lateral Quantum Dot Ordering.- Towards Quantum Dot Crystals via Multilayer Stacking on Different Indexed Surfaces.- Forced Alignment.- One-, Two-, and Three-Dimensionally Ordered GeSi Islands Grown on Prepatterned Si (001) Substrates.- Ordered SiGe Island Arrays: Long Range Material Distribution and Possible Device Applications.- Nanoscale Lateral Control of Ge Quantum Dot Nucleation Sites on Si(001) Using Focused Ion Beam Implantation.- Ge Nanodroplets Self-Assembly on Focused Ion Beam Patterned Substrates.- Metallization and Oxidation Templating of Surfaces for Directed Island Assembly.- Site Control and Selective-Area Growth Techniques of In As Quantum Dots with High Density and High Uniformity.- In(Ga)As Quantum Dot Crystals on Patterned GaAs(001) Substrates.- Directed Arrangement of Ge Quantum Dots on Si Mesas by Selective Epitaxial Growth.- Directed Self-Assembly of Quantum Dots by Local-Chemical-Potential Control via Strain Engineering on Patterned Substrates.- Structural and Luminescence Properties of Ordered Ge Islands on Patterned Substrates.- Formation of Si and Ge Nanostructures at Given Positions by Using Surface Microscopy and Ultrathin SiO2 Film Technology.- Pyramidal Quantum Dots Grown by Organometallic Chemical Vapor Deposition on Patterned Substrates.- Large-Scale Integration of Quantum Dot Devices on MBE-Based Quantum Wire Networks.- GaAs and InGaAs Position-Controlled Quantum Dots Fabricated by Selective-Area Metalloorganic Vapor Phase Epitaxy.- Spatial InAs Quantum Dot Positioning in GaAs Microdisk and Posts.