Materials Fundamentals of Gate Dielectrics by Alexander A. DemkovMaterials Fundamentals of Gate Dielectrics by Alexander A. Demkov

Materials Fundamentals of Gate Dielectrics

EditorAlexander A. Demkov, Alexandra Navrotsky

Paperback | February 3, 2011

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This book presents the fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scaling of CMOS devices. As this is a rapidly evolving field of research we choose to focus on the materials that determine the performance of device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause severe integration difficulties, thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are well-known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides requires the use of state-of-the-art first-principles calculations. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and X-ray photoelectron spectroscopy.Many of the problems encountered in the world of CMOS are also relevant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book will be of interest to those actively engaged in gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.
Alexander Demkov received his Ph.D. in Physics at Arizona State University in 1995 secializing in electronic structure theory. His postdoctoral research was focused on electronic properties of zeolites. Het joined Motorola R&D in 1997, and has been working on materials problems of advanced CMOS gate stack, and quantum transport. He has...
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Title:Materials Fundamentals of Gate DielectricsFormat:PaperbackDimensions:484 pages, 9.45 × 6.3 × 0.68 inPublished:February 3, 2011Publisher:Springer NetherlandsLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:9048167868

ISBN - 13:9789048167869

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Table of Contents

Preface. 1: Materials and Physical Properties of High-K Oxide Films; Ran Liu. 2: Device Principles of High-K Dielectrics; Kurt Eisenbeiser. 3: Thermodynamics of Oxide Systems Relevant to Alternative Gate Dielectrics; Alexandra Navrotsky and Sergey V. Ushakov. 4: Electronic Structure and Chemical Bonding in High-K Transition Metal and Lanthanide Series Rare Earth Alternative Gate Dielectrics: Applications to Direct Tunneling and Defects at Dielectric Interfaces; Gerald Lucovsky.5: Atomic Structure, Interfaces and Defects of High Dielectric Constant Gate Oxides; J. Robertson and P.W. Peacock. 6: Dielectric Properties of Simple and Complex Oxides from First-Principles; U.V. Waghmare and K.M. Rabe. 7: IVb Transition Metal Oxides and Silicates: An Ab Initio Study; Gian-Marco Rignanese. 8: The Interface Phase and Dielectric Physics for Crystalline Oxides on Semiconductors; Rodney Mckee. 9: Interfacial Properties of Epitaxial Oxide/Semiconductor Systems; Y. Liang and A.A. Demkov. 10: Functional Structures; Matt Copel. 11: Mechanistic Studies of Dielectric Growth on Silicon; Martin M. Frank and Yves J. Chabal. 12: Methodology for Development of High-k Stacked Gate Dielectrics on III-V Semiconductors; Matthias Passlack. Index