Iii-nitride Semiconductor Optoelectronics

Hardcover | January 5, 2017

byZetian MiEditorChennupati Jagadish

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III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored. Contains the latest breakthrough research in III-nitride optoelectronics Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies

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III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot,...

Zetian Mi is a Professor in the Department of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor. He received the Ph.D. degree in Applied Physics from the University of Michigan, Ann Arbor in 2006. Prof. Mi's teaching and research interests are in the areas of III-nitride nanostructures, LEDs, lasers, ...
Format:HardcoverDimensions:492 pages, 9.41 × 7.24 × 0.98 inPublished:January 5, 2017Publisher:Academic PressLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:0128095849

ISBN - 13:9780128095843

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Table of Contents

  1. Materials Challenges of AlGaN-Based UV Optoelectronic Devices
  2. M.H. Crawford

  3. Development of Deep UV LEDs and Current Problems in Material and Device Technology
  4. M. Shatalov, R. Jain, T. Saxena, A. Dobrinsky and M. Shur

  5. Growth of High-Quality AlN on Sapphire and Development of AlGaN Based Deep-Ultraviolet Light-Emitting Diodes
  6. H. Hirayama

  7. III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors
  8. T. Detchprohm, X. Li, S.-C. Shen, P.D. Yoder and R.D. Dupuis

  9. Al(Ga)N Nanowire Deep Ultraviolet Optoelectronics
  10. S. Zhao and Z. Mi

  11. Growth and Structural Characterization of Self-Nucleated III-Nitride Nanowires
  12. T. Auzelle and B. Daudin

  13. Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma Assisted Molecular Beam Epitaxy
  14. S. Albert, A.M. Bengoechea-Encabo, M.Á. Sánchez-García and E. Calleja

  15. InN Nanowires: Epitaxial Growth, Characterization, and Device Applications
  16. S. Zhao and Z. Mi

  17. Dynamic Atomic Layer Epitaxy of InN on/in GaN and its Application for Fabricating Ordered Alloys in Whole III-N System
  18. K. Kusakabe and A. Yoshikawa

  19. Nitride Semiconductor Nanorod Heterostructures for Full-Color and White-Light Applications
  20. S. Gwo, Y.-J. Lu, H.-W. Lin, C.-T. Kuo, C.-L. Wu, M.-Y. Lu and L.-J. Chen

  21. III-Nitride Electrically Pumped Visible and Near-Infrared Nanowire Lasers on (001) Silicon
  22. P. Bhattacharya, A. Hazari, S. Jahangir, W. Guo and T. Frost

  23. Exploring the Next Phase in Gallium Nitride Photonics: Cubic Phase Light Emitters Hetero-Integrated on Silicon C. Bayram and R. Liu