Nitrides And Related Wide Band Gap Materials

Hardcover | August 19, 1999

byA. Hangleiter, J.-y. Duboz, K. Kishino

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The Symposium on 'Nitrides and related wide band gap materials' at the 1998 Spring Meeting of the European Materials Research Society E-MRS in Strasbourg, France, was the third Symposium of its kind at an E-MRS meeting. Beginning in 1996, these Symposia enjoyed a steadily increasing popularity among European and international nitride researchers. Contributions covered the areas of hetero-epitaxy, bulk growth, structural, electrical and optical characterisation and device fabrication. Researchers from about 20 different countries presented their work at this symposium. Naturally, most papers were from within Europe Germany, France, Russia and the United Kingdom but there was also a remarkable number of contributions from overseas USA, Japan and Korea. For about 5 years now, semiconducting group-III nitrides have attracted an enormous level of research activity all over the world. Essentially this was triggered by the breakthroughs achieved by Shuji Nakamura and his group in Japan, who succeeded in making highly efficient blue, green and yellow light emitting diodes as well as violet laser diodes based on A1GaInN. Since then, intensive research related to material growth, device development, as well as to the fundamental properties of these materials is being carried out. The outstanding contribution of Shuji Nakamura to this field was underlined by his plenary lecture during this E-MRS meeting. He presented his most recent progress towards amber LED's and long-lived violet laser diodes.

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The Symposium on 'Nitrides and related wide band gap materials' at the 1998 Spring Meeting of the European Materials Research Society E-MRS in Strasbourg, France, was the third Symposium of its kind at an E-MRS meeting. Beginning in 1996, these Symposia enjoyed a steadily increasing popularity among European and international nitride r...

Format:HardcoverDimensions:432 pages, 8.27 × 11.02 × 0.98 inPublished:August 19, 1999Publisher:Elsevier Science & TechLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:0080436153

ISBN - 13:9780080436159

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Table of Contents

Chapter headings and selected papers: Preface.Bulk Growth and Hydride Vapor Phase Epitaxy. High pressure fabrication and processing of GaN:Mg (T.Suskiet al.).Metalorganic Vapor Phase Eqitaxy.
Sub-bandgap optical absorption of MOVPE-GaN grown under controlled nucleation (P. de Mierryet al.).Molecular Beam Epitaxy. Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers (V. Kirchneret al.).Lateral Growth. Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy (K. Hiramatsuet al.).Luminescence, Excitons and Optical Properties. Luminescence in III-nitrides (B. Monemar ).Structural Properties. X-ray analysis of the texture of heteroepitaxial gallium nitride films (N. Herreset al.).Characterization. Raman spectroscopy of disorder effects in AlxGa1_xN solid solutions (V.Y. Davydovet al.).First Principles Calculations. Lattice dynamics of boron nitride (H.W. Leite Alveset al.).Properties of InGaN. Influence of strain and buffer layer type on In incorporation during GaInN MOVPE (F. Scholzet al.).Quantum Wells and Nanostructures. Optical properties of InGaN quantum wells (S.F. Chichibuet al.).Processing and Contacts. Smooth GaN surfaces by photoinduced electro-chemical etching (T. Rotteret al.).Lasers and LED's. Theoretical optical gain in InGaN quantum wells (T. Uenoyamaet al.).Electronic Devices and Photodetectors. Microwave electronics device applications of AIGaN/GaN heterostructures (Q. Chenet al.).