Novel Compound Semiconductor Nanowires: Materials, Devices, And Applications by Fumitaro IshikawaNovel Compound Semiconductor Nanowires: Materials, Devices, And Applications by Fumitaro Ishikawa

Novel Compound Semiconductor Nanowires: Materials, Devices, And Applications

EditorFumitaro Ishikawa, Irina Buyanova

Hardcover | October 11, 2017

Pricing and Purchase Info

$251.90

Earn 1,260 plum® points

Prices and offers may vary in store

HURRY, ONLY 1 LEFT!
Quantity:

In stock online

Ships free on orders over $25

Not available in stores

about

One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D'2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.

Fumitaro Ishikawareceived his bachelor's degree in 1999 and his PhD in electronics engineering in 2004 from Hokkaido University, Sapporo. In 2004 he joined Paul Drude Institute f'r Festk'rperelektronik, Berlin. In 2007 he became assistant professor in Osaka University. Since 2013, he is associate professor in Ehime University. He has w...
Loading
Title:Novel Compound Semiconductor Nanowires: Materials, Devices, And ApplicationsFormat:HardcoverDimensions:548 pages, 9.41 × 7.24 × 0.98 inPublished:October 11, 2017Publisher:Taylor and FrancisLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:9814745766

ISBN - 13:9789814745765

Look for similar items by category:

Reviews

Table of Contents

Epitaxial Heterostructure Nanowires

Nari Jeon and Lincoln J. Lauhon

Molecular beam epitaxial growth of GaN nanocolumns and related nanocolumn emitters

Katsumi Kishino and Hiroto Sekiguchi

Novel GaNP nanowires for advanced optoelectronics and photonics

I. A. Buyanova, C. W. Tu, and W. M. Chen

GaNAs-based nanowires for near-infrared optoelectronics

I. A. Buyanova, F. Ishikawa, and W. M. Chen

Dilute Bismide Nanowires

Wojciech. M. Linhart, Szymon. J. Zelewski, Fumitaro Ishikawa, Satoshi Shimomura, and Robert Kudrawiec

Ferromagnetic MnAs/III-V Hybrid Nanowires for Spintronics

Shinjiro Hara

GaAs-Fe3Si Semiconductor-Ferromagnet Core-Shell Nanowires for Spintronics

Maria Hilse, Bernd Jenichen, and Jens Herfort

GaAs/AlGaOx Heterostructured Nanowires Synthesized by Post Growth Wet Oxidation

Fumitaro Ishikawa and Naoki Yamamoto

GaAs/SrTiO3 Core-Shell Nanowires

Xin Guan and Jos'enuelas

Ga(In)N nanowires grown by Molecular Beam Epitaxy: from quantum light emitters to nano-transistors

Zarko Gacevic and Enrique Calleja

InP-related nanowires for light-emitting applications

Kenichi Kawaguchi

InP/InAs quantum heterostructure nanowires

Guoqiang Zhang, Kouta Tateno, and Hideki Gotoh

III-Nitride Nanowires and Their Laser, LED photovoltaic Applications

Wei Guo, Pallab Bhattacharya, and Junseok Heo

III-V nanowires: transistor and photovoltaic applications

Katsuhiro Tomioka, Junichi Motohisa, and Takashi Fukui