Poly-SiGe for MEMS-above-CMOS Sensors by Pilar Gonzalez RuizPoly-SiGe for MEMS-above-CMOS Sensors by Pilar Gonzalez Ruiz

Poly-SiGe for MEMS-above-CMOS Sensors

byPilar Gonzalez Ruiz, Kristin De Meyer, Ann Witvrouw

Hardcover | July 30, 2013

Pricing and Purchase Info

$160.36 online 
$193.50 list price save 17%
Earn 802 plum® points

Prices and offers may vary in store

Quantity:

In stock online

Ships free on orders over $25

Not available in stores

about

Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability.

Poly-SiGe for MEMS-above-CMOS sensorsdemonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence of deposition conditions, germanium content and doping concentration on the electrical and piezoresistive properties of boron-doped poly-SiGe. The development of a CMOS-compatible process flow, with special attention to the sealing method, is also described. Piezoresistive pressure sensors with different areas and piezoresistor designs were fabricated and tested. Together with the piezoresistive pressure sensors, also functional capacitive pressure sensors were successfully fabricated on the same wafer, proving the versatility of poly-SiGe for MEMS sensor applications. Finally, a detailed analysis of the MEMS processing impact on the underlying CMOS circuit is also presented.

Pilar González Ruiz received her M.S. degree in Electrical Engineering from the University of Sevilla, Spain, in 2006. She obtained the PhD degree from the Electrical Engineering Department (ESAT) at the University of Leuven, Belgium in 2012. During her PhD she worked on the integration of MEMS and CMOS using polycrystalline silicon-ge...
Loading
Title:Poly-SiGe for MEMS-above-CMOS SensorsFormat:HardcoverDimensions:199 pagesPublished:July 30, 2013Publisher:Springer-Verlag/Sci-Tech/TradeLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:9400767986

ISBN - 13:9789400767980

Look for similar items by category:

Reviews

Table of Contents

Acknowledgements. Abstract. Symbols and Abbreviations.

1 Introduction. 1.1 Motivation and goal of this work. 1.2 MEMS: definition, technologies and applications. 1.3 CMOS-MEMS integration: why, how and what? 1.4 Polycrystalline SiGe for MEMS-above-CMOS applications. 1.5 A poly-SiGe based MEMS pressure sensor. 1.6 Outline of the book.

2 Poly-SiGe As Piezoresistive Material. 2.1 Introduction to piezoresistivity. 2.2 Sample preparation. 2.3 Measurement setup. 2.4 Results and discussion. 2.5 Summary and conclusions.

3 Design of a Poly-SiGe Piezoresistive Pressure Sensor. 3.1 A piezoresistive pressure sensor: definition and important performance parameters. 3.2 Design. 3.3 Summary and conclusions of the sensor design.

4 The Pressure Sensor Fabrication Process. 4.1 The pressure sensor fabrication process: a generic technology. 4.2 Pressure sensor schematic process flow. 4.3 Process developments and challenges. 4.4 Discussion on the poly-SiGe pressure sensor process.

5 Sealing of Surface Micromachined Poly-SiGe Cavities. 5.1 Introduction. 5.2 Fabrication process. 5.3 Direct sealing. 5.4 Intermediate porous cover. 5.5 Measurement setup. 5.6 Analytical model. 5.7 Results and discussion. 5.8 Summary and conclusion.

6 Characterization of Poly-SiGe pressure sensors. 6.1 Measurement setup. 6.2 Measurement results: pressure response. 6.3 Summary and conclusions. 6.4 Capacitive pressure sensors.

7 CMOS Integrated Poly-SiGe Piezoresistive Pressure Sensor. 7.1 The sensor readout circuit: an instrumentation amplifier. 7.2 Fabrication of a CMOS integrated pressure sensor. 7.3 Effect of the MEMS processing on CMOS. 7.4 Evaluation of the CMOS-integrated pressure sensor. 7.5 Conclusions.

8 Conclusions And Future Work. 8.1 Conclusions and contribution of the dissertation. 8.2 Future research directions and recommendations.

Appendix A. Appendix B. Appendix C. Appendix D.