Reliability Wearout Mechanisms in Advanced CMOS Technologies

August 24, 2009|
Reliability Wearout Mechanisms in Advanced CMOS Technologies by Alvin W. Strong
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This invaluable resource tells the complete story of failure mechanisms—from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience. It also offers the first reference book with all relevant physics, equations, and step-by-step procedures for CMOS technology reliability in one place. Practical appendices provide basic experimental procedures that include experiment design, performing stressing in the laboratory, data analysis, reliability projections, and interpreting projections.
ALVIN W. STRONG, PhD, is retired from IBM in Essex Junction, Vermont. He holds nineteen patents, has authored or coauthored a number of papers, and is a member of the IEEE and chair of the JEDEC 14.2 standards subcommittee. ERNEST Y. WU, PhD, is a Senior Technical Staff Member at Semiconductor Research and Development Center (SRDC) in...
Title:Reliability Wearout Mechanisms in Advanced CMOS TechnologiesFormat:HardcoverProduct dimensions:624 pages, 9.55 X 6.45 X 1.35 inShipping dimensions:624 pages, 9.55 X 6.45 X 1.35 inPublished:August 24, 2009Publisher:WileyLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:0471731722

ISBN - 13:9780471731726

Appropriate for ages: All ages

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