Semiconductor Device Physics and Design by Umesh MishraSemiconductor Device Physics and Design by Umesh Mishra

Semiconductor Device Physics and Design

byUmesh Mishra, Jasprit Singh

Paperback | November 8, 2014

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Semiconductor Device Physics and Design provides a fresh and unique teaching tool. Over the last decade device performances are driven by new materials, scaling, heterostructures and new device concepts. Semiconductor devices have mostly relied on Si but increasingly GaAs, InGaAs and heterostructures made from Si/SiGe, GaAs/AlGaAs etc have become important. Over the last few years one of the most exciting new entries has been the nitride based heterostructures. New physics based on polar charges and polar interfaces has become important as a result of the nitrides. Nitride based devices are now used for high power applications and in lighting and display applications. For students to be able to participate in this exciting arena, a lot of physics, device concepts, heterostructure concepts and materials properties need to be understood. It is important to have a textbook that teaches students and practicing engineers about all these areas in a coherent manner.

Semiconductor Device Physics and Design starts out with basic physics concepts including the physics behind polar heterostructures and strained heterostructures. Important devices ranging from p-n diodes to bipolar and field effect devices is then discussed. An important distinction users will find in this book is the discussion presented on device needs from the perspective of various technologies. For example, how much gain is needed in a transistor, how much power, what kind of device characteristics are needed. Not surprisingly the needs depend upon applications. The needs of an A/D or D/A converter will be different from that of an amplifier in a cell phone. Similarly the diodes used in a laptop will place different requirements on the device engineer than diodes used in a mixer circuit. By relating device design to device performance and then relating device needs to system use the student can see how device design works in real world.

This book is comprehensive without being overwhelming. The focus was to make this a useful text book so that the information contained is cohesive without including all aspects of device physics. The lesson plans demonstrated how this book could be used in a 1 semester or 2 quarter sequence.

Dr. Umesh K. Mishra is Professor at UC Santa Barbara in the Department of Electrical and Computer Engineering. His areas of focus include: Electronics and Photonics: high-speed transistors, semiconductor device physics, quantum electronics, optical control, design and fabrication of millimeter-wave devices, in situation processing and ...
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Title:Semiconductor Device Physics and DesignFormat:PaperbackDimensions:559 pagesPublished:November 8, 2014Publisher:Springer-Verlag/Sci-Tech/TradeLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:9400797788

ISBN - 13:9789400797789

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Table of Contents

Acknowledgements. Preface. Introduction. 1 Structural Properties of Semiconductors. 1.1 INTRODUCTION. 1.2 CRYSTAL STRUCTURE. 1.3 LATTICE MISMATCHED STRUCTURES. 1.4 STRAINED EPITAXY:STRAIN TENSOR. 1.5 TECHNOLOGY CHALLENGES. 1.6 PROBLEMS. 1.7 FURTHER READING. 2 Electronic levels in semiconductors. 2.1 INTRODUCTION. 2.2 PARTICLES IN AN ATTRACTIVE POTENTIAL: BOUND STATES. 2.3 ELECTRONS IN CRYSTALLINE SOLIDS. 2.4 OCCUPATION OF STATES: DISTRIBUTION FUNCTION. 2.5 METALS AND INSULATORS. 2.6 BANDSTRUCTURE OF SOME IMPORTANT SEMICONDUCTORS. 2.7 MOBILE CARRIER. 2.8 DOPING OF SEMICONDUCTORS. 2.9 DOPING IN POLAR MATERIALS. 2.10 TAILORING ELECTRONIC PROPERTIES. 2.11 STRAINED HETEROSTRUCTURES. 2.12 DEFECT STATES IN SOLIDS. 2.13 TECHNOLOGY ISSUES. 2.14 PROBLEMS. 2.15 FURTHER READING. 3 Charge transport in materials. 3.1 INTRODUCTION. 3.2 CHARGE TRANSPORT:AN OVERVIEW. 3.3 TRANSPORT AND SCATTERING. 3.4 TRANSPORT UNDER AN ELECTRIC FIELD. 3.5 SOME IMPORTANT ISSUES IN TRANSPORT. 3.6 CARRIER TRANSPORT BY DIFFUSION. 3.7 CHARGE INJECTION AND QUASI-FERMI LEVELS. 3.8 CARRIER GENERATION AND RECOMBINATION. 3.9 CURRENT CONTINUITY(The law of conservation of electrons and holes separately). 3.10 PROBLEMS. 3.11 FURTHER READING. 4 Junctions in Semiconductors: P-N Diodes. 4.1 INTRODUCTION. 4.2 P-N JUNCTION IN EQUILIBRIUM. 4.3 P-N DIODE UNDER BIAS. 4.4 REAL DIODES: CONSEQUENCES OF DEFECTS AND CARRIER GENERATION. 4.5 REVERSE BIAS CHARACTERISITCS. 4.6 HIGH-VOLTAGE EFFECTS IN DIODES. 4.7 AVALANCHE BREAKDOWN IN A P-N JUNCTION. 4.8 DIODE APPLICATIONS:AN OVERVIEW. 4.9 LIGHT EMITTING DIODE (LED). 4.10 PROBLEMS. 4.11 DESIGN PROBLEMS. 4.12 FURTHER READING. 5 Semiconductor Junctions. 5.1 INTRODUCTION. 5.2 METAL INTERCONNECTS. 5.3 METAL SEMICONDUCTOR JUNCTION: SCHOTTKY BARRIER. 5.4 METAL SEMICONDUCTOR JUNCTIONS FOR OHMIC CONTACTS. 5.5 INSULATOR-SEMICONDUCTOR JUNCTIONS. 5.6 SEMICONDUCTOR HETEROJUNCTIONS. 5.7 PROBLEMS. 5.8 FURTHER READING. 6 Bipolar Junction Transistors. 6.1 INTRODUCTION. 6.2 BIPOLAR TRANSISTOR:A CONCEPTUAL PICTURE. 6.3 STATIC CHARACTERISTICS: CURRENT-VOLTAGE RELATION. 6.4 DEVICE DESIGN AND DEVICE PERFORMANCE PARAMETERS. 6.5 BJT DESIGN LIMITATIONS: NEED FOR BAND TAILORING AND HBTs. 6.6 SECONDARY EFFECTS IN REAL DEVICES. 6.7 PROBLEMS. 6.8 DESIGN PROBLEMS. 6.9 FURTHER READING. 7 Temporal Response Of Diodes and Bipolar Transistors. 7.1 INTRODUCTION. 7.2 MODULATION AND SWITCHING OF A P-N DIODE: AC RESPONSE. 7.3 TEMPORAL RESPONSE OF A SCHOTTKY DIODE. 7.4 BIPOLAR JUNCTION TRANSISTORS: A CHARGE-CONTROL ANALYSIS. 7.5 HIGH-FREQUENCY BEHAVIOR OF A BJT. 7.6 BIPOLAR TRANSISTORS: A TECHNOLOGY ROADMAP. 7.7 PROBLEMS. 7.8 DESIGN PROBLEMS. 8 Field Effect Transistors. 8.1 INTRODUCTION. 8.2 JFET AND MESFET: CHARGE CONTROL. 8.3 CURRENT-VOLTAGE CHARACTERISTICS. 8.4 HFETs: INTRODUCTION. 8.5 CHARGE CONTROL MODEL FOR THE MODFET. 8.6 POLAR MATERIALS AND STRUCTURES. 8.7 DESIGN ISSUES IN HFETS. 8.8 SMALL AND LARGE SIGNAL ISSUES AND FIGURES OF MERIT. 8.9 IMPLICATIONS ON DEVICE TECHNOLOGY AND CIRCUITS. 8.10 PROBLEMS. 8.11 DESIGN PROBLEMS. 8.12 FURTHER READING. 9 Field Effect Transistors: MOSFET. 9.1 INTRODUCTION. 9.2 MOSFET: DEVICES AND IMPACT. 9.3 METAL-OXIDE-SEMICONDUCTOR CAPACITOR. 9.4 CAPACITANCE-VOLTAGE CHARACTERISTICS OF THE MOS STRUCTURE. 9.5 MOSFET OPERATION. 9.6 IMPORTANT ISSUES AND FUTURE CHALLENGES IN REAL MOSFETS. 9.7 SUMMARY. 9.8 PROBLEMS. 9.9 DESIGN PROBLEMS. 9.10 FURTHER READING. 10 Coherent Transport and Mesoscopic Devices. 10.1 INTRODUCTION. 10.2 ZENER-BLOCH OSCILLATIONS. 10.3 RESONANT TUNNELING. 10.4 QUANTUM INTERFERENCE EFFECTS. 10.5 MESOSCOPIC STRUCTURES. 10.6 MAGNETIC SEMICONDUCTORS AND SPINTRONICS. 10.7 PROBLEMS. 10.8 FURTHER READING. A LIST OF SYMBOLS. B BOLTZMANN TRANSPORT THEORY. B.1 BOLTZMANN TRANSPORT EQUATION. B.2 AVERAGING PROCEDURES. C DENSITY OF STATES. D IMPORTANT PROPERTIES OF SEMICONDUCTORS.