Semiconductor Device Physics and Simulation by J.S. Yuan

Semiconductor Device Physics and Simulation

byJ.S. Yuan, Juin Jei Liou

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This volume provides thorough coverage of modern semiconductor devices -including hetero- and homo-junction devices-using a two-dimensional simulator (MEDICI) to perform the analysis and generate simulation results. Each device is examined in terms of dc, ac, and transient simulator results; relevant device physics; and implications for design and analysis. Two hundred forty-four useful figures illustrate the physical mechanisms and characteristics of the devices simulated. Comprehensive and carefully organized, Semiconductor Device Physics and Simulation is the ideal bridge from device physics to practical device design.

Details & Specs

Title:Semiconductor Device Physics and SimulationFormat:HardcoverDimensions:348 pages, 10 × 7.01 × 0 inPublisher:Springer US

The following ISBNs are associated with this title:

ISBN - 10:0306457245

ISBN - 13:9780306457241

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Table of Contents

Introduction. P-N Junction. Bipolar Junction Transistors. Junction Field-Effect Transistors. Metal-Oxide-Semiconductor Field-Effect Transistors. BiCMOS Devices. Metal-Semiconductor Field-Effect Transistors. Heterojunction Bipolar Transistors. Photoconductive Diodes. Index.

From Our Editors

With the emergence of ultra-large-scaled-integrated technology--allowing millions of transistors to fit on a single microchip--came the near obsolescence of traditional analytical models that failed to account for the complexities of the new technology. This original text presents comprehensive coverage of many modern semiconductor devices, with implications for their future design and analysis. 244 illus.