Semiconductors for Room Temperature Nuclear Detector Applications by Albert C. BeerSemiconductors for Room Temperature Nuclear Detector Applications by Albert C. Beer

Semiconductors for Room Temperature Nuclear Detector Applications

byAlbert C. Beer, Albert C. Beer, Eicke R. Weber...

Other | September 11, 1995

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.

Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineersin modern industry.

  • One of the first comprehensive works on room-temperature nuclear detectors
  • Edited by technical experts in the field
  • Written by recognized authorities from industrial and academic institutions
  • Focused on the electrical, optical, and structural properties of semiconductors used for room-temperature nuclear detectors
Title:Semiconductors for Room Temperature Nuclear Detector ApplicationsFormat:OtherDimensions:606 pages, 1 × 1 × 1 inPublished:September 11, 1995Publisher:Elsevier ScienceLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:0080571999

ISBN - 13:9780080571997


Table of Contents

Introduction and Overview. High Purity Germanium Detectors. Growth of Mercuric Iodide. Electrical Properties of Mercuric Iodide. Optical Properties of Red Mercuric Iodide. Growth Methods of CdTe Nuclear Detector Materials. Characterization of CdTe Nuclear Detector Materials. CdTe Nuclear Detectors and Applications. Cd1-xZnTe Spectrometers for Gamma- and X-ray Applications. Gallium Arsenide Radiation Detectors and Spectrometers. Lead Iodide. Other Materials: Statusand Prospects. Characterization and Quantification of Detector Performance. Electronics for X-Ray and Gamma-Ray Spectrometers. Summary and Remaining Issues for Room Temperature Radiation Spectrometers.
T.E. Schlesinger and R.B. James,Introduction and Overview:Semiconductor Nuclear Detectors. Applications. Outline of Text.L.S. Darken and C.E. Cox,High-Purity Germanium Detectors:Crystal Growth. Crystal Characterization. Large Volume Detectors. Charge Collection. Germanium X-Ray Detectors. Summary.A. Burger, D. Nason, and L.van den Berg,Growth of Mercuric Iodide:M. Schieber,The Crystal Structure and Phases of Mercuric Iodide. Properties Relevant to Crystal Growth.Growth of High Purity Mercuric Iodide Crystals. Crystal Perfection. Recent Developments. Challenges in Crystal Growth.X.J. Bao, T.E. Schlesinger, and R.B. James,Electrical Properties of Mercuric Iodide:Carrier Transport. Deep Levels. Photoconductivity. Surface Effects. Detector Performance. Conclusion.X.J. Bao, R.B. James, and T.E. Schlesinger,Optical Properties of Red Mercuric Iodide:Band Structure. Experimental Techniques and Measured Values for Optical Constants. Study of Processing by Photoluminescence Spectroscopy. Conclusions.M.Hage-Ali and P. Siffert,Growth Methods of CdTe Nuclear Detector Materials:Phase Diagram. Synthesis and Purification. Growth of Bulk CdTe. High Resistivity Materials.Experimental Results and Conclusion.M.Hage-Ali and P. Siffert,Characterization of CdTe Nuclear Detector Materials:Impurities Analysis. Surface Analysis. Electrical and Optical Characterization. Discussion and Conclusions.M.Hage-Ali andP.Siffert,CdTe Nuclear Detectors and Applications:Detection Parameter. CdTe Detectors. Improvement of Detector Quality. Applications of CdTe Detectors.R.B. James, T.E. Schlesinger, J. Lund, and M. Schieber,Cd1-xTe Spectrometers for Gamma- and X-Ray Applications:Growth of Cd1-xTe Crystals. Material Properties of Cd1-xTe. Defect Characterization. Detector Characterization. Imaging Applications. Future Work.D.S. McGregor, and J.E. Kammeraad,Gallium Arsenide Radiation Detectors and Spectrometers:Basic Properties of GaAs. General Detector Operation Epitaxial GaAs Detectors. Bulk GaAs Detectors Operated in Quantum Pulse Mode. Bulk GaAs Photoconductive Detectors Operated in Current Mode. Summary.J.C. Lund, F.Olschner, and A.Burger,Lead Iodide:Physical Properties. Preparation of Lead Iodide Crystals. Radiation Detector Fabrication and Implementation. Potential Applications of Lead Iodide. Conclusion.M.R. Squillante and K.S. Shah,Other Materials: Status and Prospects:Detector Materials. V Materials. VI Semiconductors. Current Status and Prospects.V.M. Gerrish,Characterization and Quantification of Detector Performance:X-Ray and Gamma-Ray Spectroscopy. Electronic Characterization. Correlation of Material Properties with Detector Performance. Concluding Remarks.J.S. Iwanczyk and B.E. Patt,Electronics for X-Ray and Gamma-Ray Spectrometers:Electronic Noise Limited Systems. Statistical Noise LimitedSystems. Trapping Noise Limited Systems. Miniaturized Electronics and Multi-Element Systems.M. Schieber, R.B. James, and T. E.Schlesinger,Summary and Remaining Issues for Room Temperature Radiation Spectrometers:Materials Requirements. Issues in HgI2Detector Technology. Materials Issues in CdTe and CdZnTe. Unresolved Problems and Conclusions. References. Index.