Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications

EditorPeter Friedrichs, Tsunenobu Kimoto, Lothar Ley

Hardcover | December 2, 2009

Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications by Peter Friedrichs
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This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon.
The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches.
Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles.
The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
Peter Friedrichs is Managing Director at SiCED, a joint venture between Siemens and Infineon located in Erlangen, Germany. SiCED develops technologies for SiC power semiconductors and systems based on these devices. Their research is devoted to device design and simulation, processing technology as well as the characterization of devic...
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Title:Silicon Carbide: Volume 1: Growth, Defects, and Novel ApplicationsFormat:HardcoverProduct dimensions:528 pages, 9.1 X 6 X 0.6 inShipping dimensions:528 pages, 9.1 X 6 X 0.6 inPublished:December 2, 2009Publisher:WileyLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:352740953X

ISBN - 13:9783527409532

Appropriate for ages: All ages

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