Subsecond Annealing of Advanced Materials: Annealing by Lasers, Flash Lamps and Swift Heavy Ions by Wolfgang SkorupaSubsecond Annealing of Advanced Materials: Annealing by Lasers, Flash Lamps and Swift Heavy Ions by Wolfgang Skorupa

Subsecond Annealing of Advanced Materials: Annealing by Lasers, Flash Lamps and Swift Heavy Ions

byWolfgang SkorupaEditorHeidemarie Schmidt

Hardcover | December 30, 2013

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The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.
Title:Subsecond Annealing of Advanced Materials: Annealing by Lasers, Flash Lamps and Swift Heavy IonsFormat:HardcoverDimensions:321 pagesPublished:December 30, 2013Publisher:Springer-Verlag/Sci-Tech/TradeLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:3319031309

ISBN - 13:9783319031309

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Table of Contents

The very early time.- Nanonet formation by constitutional supercooling of pulsed laser annealed, Mn-implanted germanium.- Metastable activation of dopants by solid phase epitaxial recrystallization.- Superconducting Ga-implanted Germanium.- Structural changes in SiGe/Si layers induced by fast crystallization.- Sub-nanosecond thermal spike-induced nanostructuring of thin solid films under swift heavy-ion (SHI) irradiation.- Pulsed-laser-induced epitaxial growth of silicon for three-dimensional integrated circuits.- Improvement of performance and cost of functional films using  large area laser RTP.- Pulsed laser dopant activation for semiconductors and solar cells.- Formation of high-quality µm-order-thick poly-Si films on glass substrates by flash lamp annealing.- Millisecond-range liquid-phase processing of  silicon-based hetero-nanostructures.- Radiation thermometry - sources of uncertainty during contactless temperature measurement.- Millisecond annealing for semiconductor device applications.- Low-cost and large-area electronics, roll-to-roll processing and  beyond.- Application of sub-second annealing for dilute ferromagnetic semiconductors.