Technology of Gallium Nitride Crystal Growth by Dirk EhrentrautTechnology of Gallium Nitride Crystal Growth by Dirk Ehrentraut

Technology of Gallium Nitride Crystal Growth

byDirk EhrentrautEditorElke Meissner, Michal Bockowski

Paperback | September 5, 2012

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Semiconductor materials have been studied intensively since the birth of silicon technology more than 50 years ago. The ability to physically and chemically t- lor their properties with precision is the key factor responsible for the electronic revolution in our society over the past few decades. Semiconductor material s- tems (like silicon and GaAs-related materials) have now matured and found well established applications in electronics, optoelectronics, and several other ?elds. Other materials such as III-Nitrides were developed later, in response to needs that the above mentioned semiconductors were unable to ful?ll. The properties of I- nitrides (AlN, GaN InN, and related alloy systems) make them an excellent choice for ef?cient light emitters in the visible as well as the UV region, UV detectors, and for a variety of electronic device such as high frequency unipolar power devices. There was a major upsurgein the research of the GaN material system around1970.
Dr. Dirk Ehrentraut received a Diploma in Crystallography from the Humboldt University of Berlin, Germany and a Ph.D. in Sciences from the Institute of Applied Optics at the Swiss Federal Institute of Technology in Lausanne (EPFL), Switzerland. He joined the Tohoku University end of 2003 and is currently a visiting professor of the Ins...
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Title:Technology of Gallium Nitride Crystal GrowthFormat:PaperbackDimensions:326 pages, 23.5 × 15.5 × 0.01 inPublished:September 5, 2012Publisher:Springer-Verlag/Sci-Tech/TradeLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:3642263895

ISBN - 13:9783642263897

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Table of Contents

Market for Bulk GaN Crystals.- Development of the Bulk GaN Substrate Market.- Vapor Phase Growth Technology.- Hydride Vapor Phase Epitaxy of GaN.- Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds.- Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology.- Nonpolar and Semipolar GaN Growth by HVPE.- High Growth Rate MOVPE.- Solution Growth Technology.- Ammonothermal Growth of GaN Under Ammono-Basic Conditions.- A Pathway Toward Bulk Growth of GaN by the Ammonothermal Method.- Acidic Ammonothermal Growth Technology for GaN.- Flux Growth Technology.- High Pressure Solution Growth of Gallium Nitride.- A Brief Review on the Na-Flux Method Toward Growth of Large-Size GaN Crystal.- Low Pressure Solution Growth of Gallium Nitride.- Characterization of GaN Crystals.- Optical Properties of GaN Substrates.- Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy.