Understanding Semiconductor Devices by Sima DimitrijevUnderstanding Semiconductor Devices by Sima Dimitrijev

Understanding Semiconductor Devices

bySima Dimitrijev

Hardcover | February 15, 2000

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Ideal for undergraduate and beginning graduate students in electrical engineering, Understanding Semiconductor Devices provides a solid grounding in both fundamental principles and practical skills. The text features intuitive explanations and a motivating "electronics-to-physics" approachthat progresses from basic to more abstract concepts. It includes intriguing and diverse problems, review questions, and worked out examples. DT Part I: The Fundamentals introduces students to essential material (semiconductor theory, diodes, MOSFETs, and BJTs) without assuming extensive prerequisite knowledge. DT Part II: Advanced Topics covers the specifics of deep submicron MOSFET, photonic, microwave, and power devices and introduces advanced technologies, device reliability, and quantum mechanics. Bridging the gap between theory and practice, Understanding Semiconductor Devices incorporates the "nuts and bolts" of SPICE (models and parameters) and provides links between theoretical principles and real-life issues like reliability and device parameter measurement.
Sima Dimitrijev is at Griffith University.
Title:Understanding Semiconductor DevicesFormat:HardcoverPublished:February 15, 2000Publisher:Oxford University PressLanguage:English

The following ISBNs are associated with this title:

ISBN - 10:019513186X

ISBN - 13:9780195131864


Table of Contents

PrefacePART 1: THE FUNDAMENTALS1. Resistors: Introduction to Semiconductors1.1. The Basics: Resistor Structure and Drift Current1.2. Insight Into Conducitivity Ingredients: Chemical-Bond Model1.3. Making a Semiconductor Resistor: Lithography and Diffusion1.4. Carrier Mobility1.5. Energy-Band Model2. Capacitors: Reverse-Biased P-N Junction and MOS Structure2.1. Basic Applications2.2. Reverse-Biased P-N Junction2.3. C-V Dependence of the Reverse-Biased P-N Junction: Solving the Poisson Equation2.4. SPICE Parameters and Their Measurement2.5. Metal Oxide Semiconductor (MOS) Capacitor and Thermal Oxide3. Diodes: Forward-Biased P-N Junction and Metal-Semiconductor Contact3.1. Rectifying Diodes: Fundamental Effects and Models3.2. SPICE Models and Parameters, Stored-Charge Capacitance, and Temperature Effects3.3. Reference Diodes: Breakdown Phenomena3.4. Schottky Diodes: Metal-Semiconductor Contact4. Basics of Transistor Applications4.1. Analog Circuits4.2. Digital Circuits5. MOSFET5.1. MOSFET Principles5.2. MOSFET Technologies5.3. MOSFET Modeling5.4. SPICE Parameters and Parasitic Elements6. BJT6.1. BJT Principles6.2. Bipolar IC Technologies6.3. BJT Modeling6.4. SPICE Parameters6.5. Parasitic Elements Not Included in Device ModelsPART 2: ADVANCED TOPICS7. Advanced and Specific IC Devices and Technologies7.1. Deep Submicron MOSFET7.2. Memory Devices7.3. Silicon-on-Insulator (SOI) Technology7.4. BICMOS Technology8. Photonic Devices8.1. Light-Emitting Diodes (LED): Carrier Recombination8.2. Photodetectors and Solar Cells: External Carrier Generation8.3. Lasers9. Microwave FETs and Diodes9.1. Gallium-Arsenide versus Silicon9.2. JFET9.3. MESFET9.4. HEMT9.5. Negative Resistance Diodes10. Power Devices10.1. Power Devices in Switch-Mode Power Circuits10.2. Power Diodes10.3. Power MOSFET10.4. IGBT10.5. Thyristor11. Semiconductor Device Reliability11.1. Basic Reliability Concepts11.2. Failure Mechanisms11.3. Reliability Screening11.4. Reliability Measurement12. Quantum Mechanics12.1. Wave Function12.2. Heisenberg Uncertainty Principle12.3. Schrodinger EquationAppendicesA. Basic Integrated Circuit Concepts and EconomicsB. Crystal Lattices, Planes, and DirectionsC. Hall Effect and Summary of Kinetic PhenomenaD. Summary of Equations and Key PointsE. Contents of Computer Exercises ManualList of Selected SymbolsBibliographyAnswers to Selected ProblemsIndex